The objective of this project is to design and implement hybrid GaN power amplifiers on the anodized aluminum substrate which can significantly improve the heat dissipation of the active devices with a minimal cost. Aluminum has superior heat dissipation capability and can be easily and selectively anodized to form a thick dielectric layer of 80 um. Active devices (or hear sources) such as GaN HEMTs are directly attached on the aluminum substrate to sink heats effectively and large-sized passive elements are fabricated on the anodized aluminum substrate using thin film semiconductor process.